Data Sheet

ADL8102

analog.com

Rev. 0 | 3 of 23

SPECIFICATIONS

1 GH

z TO 9 GHz

Supply voltage (VDD) = 5 V, quiescent current (IDQ) = 110 mA, bias resistance (RBIAS) = 1150 Ω, and TCASE = 25°C, unless otherwise noted.

Table 1. Specifications for 1 GHz to 9 GHz

Parameter

Min

Typ

Max

Unit

Test Conditions/Comments

FREQUENCY RANGE

1

9

GHz

GAIN (S21)

23

25.5

dB

Gain Variation over Temperature

0.053

dB/°C

NOISE FIGURE

3

dB

RETURN LOSS

Input (S11)

15

dB

Output (S22)

18

dB

OUTPUT

Power for 1 dB Compression (OP1dB)

11

13.5

dBm

Saturated Output Power (PSAT)

15.5

dBm

OIP3

25

dBm

Measurement taken at POUT per tone = −4 dBm

Second-Order Intercept (OIP2)

32

dBm

Measurement taken at POUT per tone = −4 dBm

POWER ADDED EFFICIENCY (PAE)

6.5

%

Measured at PSAT

9 GH

z TO 19 GHz

VDD = 5 V, IDQ= 110 mA, RBIAS = 1150 Ω, and TCASE = 25°C, unless otherwise noted.

Table 2. Specifications for 9 GHz to 19 GHz

Parameter

Min

Typ

Max

Unit

Test Conditions/Comments

FREQUENCY RANGE

9

19

GHz

S21

24.5

27

dB

Gain Variation over Temperature

0.054

dB/°C

NOISE FIGURE

2.5

dB

RETURN LOSS

S11

23

dB

S22

15

dB

OUTPUT

OP1dB

11

13

dBm

PSAT

15.4

dBm

OIP3

24.5

dBm

Measurement taken at POUT per tone = −4 dBm

OIP2

29

dBm

Measurement taken at POUT per tone = −4 dBm

PAE

6.7

%

Measured at PSAT