B1D08065F datasheet(1/7 Pages) BASICSEMI

Teilenummer	B1D08065F

Bauteilbeschribung	SiC Schottky Diode

PDF	7 Pages

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Hersteller	BASICSEMI [BASIC SEMICONDUCTOR]

Direct Link	https://www.basicsemi.com/

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

SiC Schottky Diode

V

RRM

650 V

8 A

24 nC

I

F (TC=155°C)

Q

C

Package: TO-263-2

Product Summary

Features

Benefits

Extremely low reverse current

No reverse recovery current

Temperature independent switching

Positive temperature coefficient on V

F

Excellent surge current capability

Low capacitive charge



Essentially no switching losses

System efficiency improvement over Si diodes

Increased power density

Enabling higher switching frequency



Switch mode power supplies (SMPS)

Uninterruptible power supplies



Pin1,3 and backside - Cathode

Pin2 - Anode

Motor drivers

Power factor correction

Reduction of heat sink requirements

System cost savings due to smaller magnetics

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Reduced EMI

Applications

Package Pin Definitions

Package Parameters

1 / 7

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Part Number

Marking

Package

B1D08065F

TO-263-2

2

1

3,backside

Electrical Connection

B1D08065F

2

3

1

Rev. 1.2

Ähnliche Beschreibung - B1D08065F

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
BASIC SEMICONDUCTOR	B1D06065F	1Mb / 7P	SiC Schottky Diode Rev. 2.3
	B1D06065KF	1Mb / 7P	SiC Schottky Diode Rev. 2.2
	B1D08065KS	604Kb / 7P	SiC Schottky Diode Rev. 0.1
	B1D10065E	2Mb / 7P	SiC Schottky Diode Rev. 1.2
	B1D10065F	820Kb / 7P	SiC Schottky Diode Rev. 1.2
	B1D10065H	1Mb / 7P	SiC Schottky Diode Rev. 2.4
	B1D10065K	1Mb / 7P	SiC Schottky Diode Rev. 2.2
	B1D12065K	1Mb / 7P	SiC Schottky Diode Rev. 1.3
	B1D15065K	1Mb / 7P	SiC Schottky Diode Rev. 1.4
	B1D30065HC	1Mb / 7P	SiC Schottky Diode Rev. 0.2

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