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DB101S Datenblatt(PDF) 2 Page - SMC Diode Solutions Co. LTD |
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DB101S Datenblatt(HTML) 2 Page - SMC Diode Solutions Co. LTD |
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2 / 5 page ![]() Technical Data Data Sheet N1459, Rev. B China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com DB101S THRU DB107S Characteristic Symbol DB 101S DB 102S DB 103S DB 104S DB 105S DB 106S DB 107S Unit Maximum Forward Voltage Drop per Bridge Element @IF =1.0A, TJ=25°C VF 1.0 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IR 5 200 μA Typical Junction Capacitance (Note 2) CJ 25 pF * Pulse width < 300 µs, duty cycle < 2% Characteristic Symbol DB 101S DB 102S DB 103S DB 104S DB 105S DB 106S DB 107S Unit Typical Thermal Resistance Junction to Ambient RθJA 40 °C/W Typical Thermal Resistance Junction to Lead RθJL 15 °C/W Operating Junction and Storage Temperature Range TJ ,TSTG -55+150 °C Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad. 2. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC Electrical Characteristics: Thermal-Mechanical Specifications: Ratings and Characteristics Curves |
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