The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

MOS INTEGRATED CIRCUIT

μPD444008L

4M-BIT CMOS FAST SRAM

512K-WORD BY 8-BIT

DATA SHEET

Document No. M14429EJ6V0DS00 (6th edition)

Date Published September 2006 NS CP(K)

Printed in Japan

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

1999

Description

The

μPD444008L is a high speed, low power, 4,194,304 bits (524,288 words by 8 bits) CMOS static RAM.

Operating supply voltage is 3.3 V

± 0.3 V.

The

μPD444008L is packaged in 36-pin PLASTIC SOJ.

Features

• 524,288 words by 8 bits organization

• Fast access time : 8, 10, 12, ns (MAX.)

• Output Enable input for easy application

• Single +3.3 V power supply

Ordering Information

Part number

Package

Access time

Supply current mA (MAX.)

ns (MAX.)

At operating

At standby

μPD444008LLE-A8

36-pin PLASTIC SOJ

8

185

5

μPD444008LLE-A10

(10.16 mm (400))

10

165

μPD44008LLE-A12

12

155

μPD444008LLE-A8-A

8

185

μPD444008LLE-A10-A

10

165

μPD444008LLE-A12-A

12

155

Remark Products with -A at the end of the part number are lead-free products.