S12NF30L datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STS12NF30L

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

µA

VDS=Max rating,TC=125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 16V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 6A

VGS = 4.5V, ID = 6A

0.008

0.01

0.009

0.011

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5.

Forward transconductance

VDS = 15V, ID=6A

Ciss

Input capacitance

VDS = 25V, f = 1 MHz, VGS

= 0

2400

Coss

Output capacitance

590

Crss

Reverse transfer

capacitance

200

Total gate charge

VDD = 24V, ID = 12A,

VGS = 4.5V

(see Figure 13)

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 5.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD=15 V, ID=6A,

RG=4.7Ω, VGS= 4.5V

(see Figure 12)

td(off)

Turn-off-delay time

Fall time

VDD = 15V, ID = 6A,

RG =4.7Ω, VGS =

4.5V

(see Figure 12)

tr(Voff)

Off-voltage rise time

fall time

cross-over time

VDD=24V, ID=12A,

RG=4.7Ω, VGS=4.5V

(see Figure 14)

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