STPS30100ST datasheet(4/7 Pages) STMICROELECTRONICS

4 / 7 page

Characteristics

STPS30100ST

4/7

Figure 7.

Reverse leakage current versus

reverse voltage applied (typical

values)

Figure 8.

Junction capacitance versus

reverse voltage applied (typical

values)

Figure 9.

Forward voltage drop versus

forward current (high level)

Figure 10.

Forward voltage drop versus

forward current (low level)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

2030

4050

6070

8090

100

IR(mA)

Tj=150°C

Tj=125°C

Tj=25°C

Tj=100°C

Tj=75°C

Tj=50°C

VR(V)

100

1000

10000

100

F=1M H z

Vosc=30m V

Tj=25°C

C(pF)

VR (V)

100

120

140

160

180

200

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IFM(A)

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

VFM(V)

0.0

0.2

0.4

0.6

0.8

1.0

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

V(V)

IFM(A)

STPS30100ST Datenblatt(PDF) 4 Page - STMicroelectronics

STPS30100ST Datenblatt(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7

Datenblatt Download

Link URL