BD243C datasheet(3/8 Pages) STMICROELECTRONICS

Teilenummer	BD243C

Bauteilbeschribung	COMPLEMENTARY SILICON POWER TRANSISTOR

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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BD243C - BD244C

2 Electrical Characteristics

3/8

Electrical Characteristics

Table 2.

Electrical Characteristics (TCASE = 25°C; unless otherwise specified)

Note: 1 Pulsed duration = 300

μs, duty cycle ≤2%.

For PNP types voltage and current values are negative

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = rated VCEO

0.4

ICEO

Collector Cut-off Current

(IB = 0)

VCE = 60 V

0.7

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

1mA

VCEO(sus)

Note 1

Collector-Emitter Sustaining

Voltage

(IB = 0 )

IC = 30 mA

100

VCE(sat)

Note 1

Collector-Emitter Saturation

Voltage

IC = 6 A

IB = 1 A

1.5

VBE

Note 1

Base-Emitter Voltage

IC = 6 A

IB = 1 A

hFE

Note 1

DC Current Gain

IC = 0.3 mA

VCE = 4 V

IC = 3 A

VCE = 4 V

hfe

Small Signal Current Gain

IC = 0.5 A VCE = 10 V f = 1MHz

IC = 0.5 A VCE = 4 V f = 1MHz

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