STRH40N25FSY3

Electrical characteristics

5/13

2.2

Post-irradiation

The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The

technology is extremely resistant to assurance well functioning of the device inside the

radiation environments. Every manufacturing lot is tested for total ionizing dose.

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

36

144

A

A

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

1.5

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

484

8.4

35

ns

µC

A

a.

According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec.

Table 8.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Zero gate voltage drain current

10

µA

Gate body leakage current

±

100

nA

Drain-to-source breakdown

voltage

250

V

Gate threshold voltage

2

4.5

V

Static drain-source on

resistance

0.084

0.1

Ω