BU810 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.66

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 600 V

200

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 400 V

IEBO

∗

Emitter Cut-off

Current (IC = 0)

VEB = 5 V

150

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 0.1 A

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 20 mA

IC = 4 A

IB = 200 mA

IC = 7 A

IB = 0.7 A

2.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 2 A

IB = 20 mA

IC = 4 A

IB = 200 mA

2.2

Diode Forward Voltage IF = 7 A

RESISTIVE SWITCHING TIMES

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ton

Turn-on Time

Storage Time

Fall Time

VClamp = 250V

IC = 2A

IB1 = 20mA

VBE(off) = -5 V

0.6

1.5

0.5

µs

INDUCTIVE SWITCHING TIMES

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Storage Time

Fall Time

VClamp = 250V

IC = 2A

IB1 = 20mA

VBE(off) = -5 V

L = 500

µH

1.5

0.4

µs

Storage Time

Fall Time

VClamp = 250V

IC = 7A

IB1 = 0.7A

VBE(off) = -5 V

L = 500

µH

1.5

0.4

µs

* Pulsed : Pulse duration = 300

µs, duty cycle = 2%

BU810

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