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30N06-TF3-R Datenblatt(PDF) 3 Page - Unisonic Technologies

Teilenummer 30N06-TF3-R
Bauteilbeschribung  30 Amps, 60 Volts N-CHANNEL POWER MOSFET
PDF  8 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

30N06-TF3-R Datenblatt(HTML) 3 Page - Unisonic Technologies

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30N06
MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 8
www.unisonic.com.tw
QW-R502-087,A
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage
VSD
IS = 30A, VGS = 0 V
1.4
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
30
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Integral Reverse p-n Junction Diode in
the MOSFET
G
S
D
120
A
Reverse Recovery Time
tRR
40
ns
Reverse Recovery Charge
QRR
IS = 30A, VGS = 0 V
dIF / dt = 100 A/µs (Note4)
70
µC
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=19.5mH, IAS=30A, RG=20Ω, Starting TJ=25℃
3. ISD≤50A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%
5. Essentially independent of operating temperature.



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