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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BUT30V Datenblatt(PDF) 1 Page - STMicroelectronics |
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BUT30V Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 7 page  BUT30V NPN TRANSISTOR POWER MODULE s NPN TRANSISTOR s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION CASE s SPECIFIED ACCIDENTAL OVERLOAD AREAS s FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING s LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS: s MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM February 2003 ISOTOP Pin 4 not connected ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEV Collector-Emitter Voltage (VBE = -5 V) 200 V VCEO(sus) Collector-Emitter Voltage (IB = 0) 125 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 100 A ICM Collector Peak Current (tp = 10 ms) 150 A IB Base Current 20 A IBM Base Peak Current (tp = 10 ms) 30 A Ptot Total Dissipation at Tc = 25 oC 250 W Visol Insulation Withstand Voltage (RMS) from All Four Terminals to External Heatsink 2500 Tstg Storage Temperature -55 to 150 oC Tj Max. Operating Junction Temperature 150 oC ® 1/7 |
Ähnliche Teilenummer - BUT30V |
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Ähnliche Beschreibung - BUT30V |
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