1803DFX datasheet(3/10 Pages) STMICROELECTRONICS

Teilenummer	1803DFX

Bauteilbeschribung	High voltage NPN Power transistor for standard Definition CRT display

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MD1803DFX

Electrical characteristics

3/10

Electrical characteristics

(TCASE = 25°C; unless otherwise specified)

Table 3.

Electrical characteristics

1 Pulsed duration = 300

µs, duty cycle ≤1.5%.

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 1500V

Tc= 125°C

0.2

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5V

120

V(BR)EBO

Emitter-base breakdown voltage

(IC = 0)

IE = 700 mA

VCE(sat)

Note 1

Collector-emitter saturation

voltage

IC = 5 A

IB = 1.25 A

VBE(sat)

Note 1

Base-emitter saturation voltage

IC = 5 A

IB = 1.25 A

1.2

hFE

Note 1

DC current gain

IC = 1 A

VCE = 5 V

IC = 5 A

VCE = 1 V

IC = 5 A

VCE = 5 V

5.5

7.5

Diode forward voltage

IF= 5 A

1.6

Inductive load

Storage time

Fall time

IC = 4A ___ _ _

fh = 16KHz

IB(on) = 0.6A__

VBE(off) = -2.7V

LBB(off) = 4.5µH

2.5

0.3

0.6

µs

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