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MMBTA42L-AE3-R Datenblatt(PDF) 2 Page - Unisonic Technologies |
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MMBTA42L-AE3-R Datenblatt(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() MMBTA42 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R206-004,C ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6 V Collector Dissipation (TA=25℃) PC 350 mW Collector Current IC 500 mA Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T J=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100 μA, I E=0 300 V Collector-Emitter Breakdown Voltage BVCEO Ic=1mA, IB=0 300 V Emitter-Base Breakdown Voltage BVEBO IE=100μA, Ic=0 6 V Collector-Emitter Saturation Voltage VCE(SAT) Ic=20mA, IB=2mA 0.2 V Base-Emitter Saturation Voltage VBE(SAT) Ic=20mA, IB=2mA 0.90 V Collector Cut-Off Current ICBO VCB=200V, IE=0 100 nA Emitter Cut-Off Current IEBO VBE=6V, Ic=0 100 nA DC Current Gain hFE VCE=10V, Ic=1mA VCE=10V, Ic=10mA VCE=10V, Ic=30mA 80 80 80 300 Current Gain Bandwidth Product fT VCE=20V, Ic=10mA, f=100MHz 50 MHz Collector Base Capacitance Ccb VCB=20V, IE=0, f=1MHz 3 pF |
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