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2SD313 Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 2SD313
Bauteilbeschribung  NPN EPITAXIAL PLANAR TRANSISTOR
PDF  4 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD313 Datenblatt(HTML) 2 Page - Unisonic Technologies

  2SD313 Datasheet HTML 1Page - Unisonic Technologies 2SD313 Datasheet HTML 2Page - Unisonic Technologies 2SD313 Datasheet HTML 3Page - Unisonic Technologies 2SD313 Datasheet HTML 4Page - Unisonic Technologies  
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2SD313
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-001,B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
3
A
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=1mA
60
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA
60
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100uA
5
V
Collector Cut-Off Current
ICBO
VCB=20V, IE=0
0.1
mA
Emitter Cut-Off Current
IEBO
VEB=4V, IC=0
1.0
mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=2A, IB=0.2A
1.0
V
Base-Emitter On voltage
VBE(ON)
VCE=2V, IC=1A
1.5
V
DC Current Gain
hFE
IC=1A, VCE=2V
IC=0.1A,VCE=2V
40
40
320
CLASSIFICATION ON hFE
RANK
C
D
E
F
RANGE
40-80
60-120
100-200
160-320



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