MMBTA42L-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

MMBTA42

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

www.unisonic.com.tw

QW-R206-004.B

ABSOLUTE MAXIMUM RATINGS (T

a=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

300

Collector-Emitter Voltage

VCEO

300

Emitter-Base Voltage

VEBO

Collector Current

500

Power Dissipation

350

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T

J =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

Ic=100

µA, I

E=0

300

Collector-Emitter Breakdown Voltage

BVCEO

Ic=1mA, IB=0

300

Emitter-Base Breakdown Voltage

BVEBO

IE=100µA, Ic=0

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=20mA, IB=2mA

0.2

Base-Emitter Saturation Voltage

VBE(sat)

Ic=20mA, IB=2mA

0.90

Collector Cut-Off Current

ICBO

VCB=200V, IE=0

100

Emitter Cut-Off Current

IEBO

VBE=6V, Ic=0

100

DC Current Gain(note)

hFE

VCE=10V, Ic=1mA

VCE=10V, Ic=10mA

VCE=10V, Ic=30mA

300

Current Gain Bandwidth Product

VCE=20V, Ic=10mA, f=100MHz

MHz

Collector Base Capacitance

Ccb

VCB=20V, IE=0, f=1MHz

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