| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1900 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1900 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc Silicon PNP Power Transistor 2SA1900 www.iscsemi.com 2023-8-17 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VEBO Emitter-Base Breakdown Voltage IE= -50uA; IC= 0 -5 -- V VCEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -50 -- V VCBO Collector-Base Breakdown Voltage IC= -50mA; IE= 0 -60 -- V ICBO Collector Cutoff Current VCE = -40V -- -0.1 uA IEBO Emitter Cutoff Current VEB = -4V -- -0.1 uA VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -- -0.4 V hFE DC Current Gain IC= -0.5A; VCE= -3V 120 270 PACKAGE OUTLINE : |
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