| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD400 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD400 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc Silicon NPN Power Transistor 2SD400 www.iscsemi.com 2023-9-05 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 25 -- -- V V(BR)CEO Collector-Emitter Breakdown Voltage IC=1mA; IB= 0 25 -- -- V V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IE= 0 5 -- -- V ICBO Collector Cutoff Current VCE = 20V -- -- 1 uA IEBO Emitter Cutoff Current VEB = 4V -- -- 1 uA VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB=0.05A -- -- 0.3 V VBE(sat) Base -Emitter Saturation Voltage IC=0. 5A; IB= 0.05A -- -- 1.2 V hFE DC Current Gain IC= 50mA; VCE= 2V 60 -- 560 hFE DC Current Gain IC= 1A; VCE= 2V 30 -- -- hFE Classifications D E F G 60-120 100-200 160-320 280-560 |
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