FDH44N50 datasheet(2/3 Pages) ISC

Teilenummer	FDH44N50

Bauteilbeschribung	isc N-Channel MOSFET Transistor

PDF	3 Pages

Scroll/Zoom	100%

Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

Logo

2 / 3 page

isc N-Channel MOSFET Transistor

FDH44N50

www.iscsemi.com

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 0.25mA

500

VGS(th)

Gate Threshold Voltage

VDS= 10V; ID= 0.25mA

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 22A

0.12

IGSS

Gate-Body Leakage Current

VGS= ±30V;VDS= 0

0.1

IDSS

Zero Gate Voltage Drain Current

VDS= 500V; VGS= 0

VSD

Forward On-Voltage

IS= 44A; VGS= 0

1.2

Ciss

Input Capacitance

VGS = 0V,

VDS = 25V,

f = 1.0MHz

8310

Coss

Output Capacitance

990

Crss

Reverse Transfer Capacitance

390

Total Gate Charge

VDD = 300V,

ID = 44A,

VGS = 10V

370

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

156

td(on)

Turn-on Delay Time

VDD = 300V,

ID = 44A,

RG = 0.6Ω

Turn-on Rise Time

td(off)

Turn-off Delay Time

Turn-off Fall Time

FDH44N50 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

FDH44N50 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2 3

Datenblatt Download

Link URL