M65KA128AL datasheet(1/53 Pages) STMICROELECTRONICS

Teilenummer	M65KA128AL

Bauteilbeschribung	128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs

PDF	53 Pages

Scroll/Zoom	100%

Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 53 page

April 2006

Rev 3

1/53

1

M65KA128AL

128Mbit (4 Banks x 2M x 16)

1.8V Supply, Low Power SDRAMs

Feature summary

■

128Mbit Synchronous Dynamic RAM

– Organized as 4 Banks of 2 MWords, each

16 bits wide

■

Supply Voltage

–VDD = 1.65V to 1.95V

–VDDQ = 1.65 to 1.95V for Input/Output

■

Synchronous Burst Read and Write

– Fixed Burst lengths: 1, 2, 4, 8 words or full

Page

– Burst Types: Sequential and Interleaved.

– Maximum clock frequency: 104MHz

–CAS Latency 2, 3

■

Automatic Precharge

■

Low Power features:

– PASR (Partial Array Self Refresh),

– Automatic TCSR (Temperature

Compensated Self Refresh)

– Driver Strength (DS)

– Deep Power-Down Mode

■

Delivery form: Unsawn Wafer

■

Auto Refresh and Self Refresh

■

LVCMOS Interface Compatible with

Multiplexed Addressing

■

Operating temperature

– –25°C to +90°C

The M65KA128AL is only available as part of a Multi-Chip Package Product.

Wafer

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Ähnliche Beschreibung - M65KA128AL

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Samsung semiconductor	K4S281632B	108Kb / 10P	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
	K4S281632C	47Kb / 9P	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
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Winbond	W981216AH	2Mb / 44P	2M x 16 bit x 4 Banks SDRAM
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