DTA114E-AE3-R datasheet(2/3 Pages) UTC

Teilenummer	DTA114E-AE3-R

Bauteilbeschribung	PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS)

PDF	3 Pages

Scroll/Zoom	100%

Hersteller	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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DTA114E

PNP EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

QW-R206-046,C

ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VIN(off)

VCC= -5V, IOUT= -100μA

-0.5

Input Voltage

VIN(ON)

VOUT= -0.3V, IOUT= -10mA

-3

Output Voltage

VOUT(ON)

IOUT/IIN= -10mA/-0.5 mA

-0.3

Input Current

IIN

VIN= -5V

-0.88

Output Current

IOUT(off)

VCC= -50V , VIN=0V

-0.5

μA

DC Current Gain

VOUT= -5V, IOUT= -5mA

Input Resistance

kΩ

Resistance Ratio

R2/R1

0.8

1.2

Transition Frequency

VCE= -10 V, IE=5mA, f=100MHz

250

MHz

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

Input Voltage

VIN

-40 ~ +10

Output Current

IOUT(MAX)

-100

Power Dissipation

200

Junction Temperature

150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

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