BUT11AF datasheet(5/8 Pages) PHILIPS

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BUT11AF Datenblatt(PDF) 5 Page - NXP Semiconductors

Teilenummer	BUT11AF

Bauteilbeschribung	Silicon Diffused Power Transistor

PDF	8 Pages

Scroll/Zoom	100%

Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 8 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11AF

Fig.11. Typical base-emitter and collector-emitter saturation voltages.

BEsat = f(IC); VCEsat = f(IC); IC/IB = 5

Fig.12. Collector-emitter saturation voltage. Solid lines = typ values,

dotted lines = max values. V

CEsat = f(IB); parameter IC

August 1997

Rev 1.000

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