TIP112 datasheet(1/3 Pages) UTC

Teilenummer	TIP112

Bauteilbeschribung	NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

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Hersteller	UTC [Unisonic Technologies]

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UTCTIP112

NPNEPITAXIAL PLANAR TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R203-022,A

NPN EPITAXIAL SILICON

DARLINGTON TRANSISTOR

FEATURES

* High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min)

* Low Collector-Emitter Saturation Voltage

* Industrial Use

EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)

TO-220

B

C

E

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

VALUE

UNIT

Collector to Base Voltage

VCBO

100

V

Collector to Emitter Voltage

VCEO

100

V

Emitter to Base Voltage

VEBO

5

V

Collector Current (DC)

Ic

2

A

Collector Current (Pulse)

Icp

4

A

Base Current (DC)

IB

50

mA

Collector Dissipation (Ta=25

°C)

Pc

2

W

Collector Dissipation (Tc=25

°C)

Pc

50

W

Junction Temperature

Tj

150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector-Emitter Breakdown Voltage

VCEO(SUS)

IC=30mA, IB=0

100

V

Collector Cut-Off Current

ICBO

VCB=100V, IE=0

1

mA

Collector-Cut-Off Current

ICEO

VCE=50V, IB=0

2

mA

Emitter Cut-Off Current

IEBO

VBE=5V, IC=0

2

mA

DC Current Gain

hFE

IC=1A, VCE=4V

IC=2A, VCE=4V

1000

500

Collector-Emitter Saturation Voltage

VCE(sat)

IC=2A, IB=8mA

2.5

V

Base-Emitter Saturation Voltage

VBE(on)

VCE=4V, IC=2A

2.8

V

Output capacitance

Cob

VCB=10V, IE=0, f=0.1MHz

100

pF

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