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TIP131 Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer TIP131
Bauteilbeschribung  Darlington Complementary Silicon Power Transistors
PDF  4 Pages
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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TIP131 Datenblatt(HTML) 2 Page - ON Semiconductor

  TIP131 Datasheet HTML 1Page - ON Semiconductor TIP131 Datasheet HTML 2Page - ON Semiconductor TIP131 Datasheet HTML 3Page - ON Semiconductor TIP131 Datasheet HTML 4Page - ON Semiconductor  
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TIP131, TIP132 (NPN), TIP137 (PNP)
http://onsemi.com
2
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈ 8.0 k
≈ 120
PNP
TIP137
BASE
EMITTER
COLLECTOR
≈ 8.0 k
≈ 120
NPN
TIP131
TIP132
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
TIP131
TIP132, TIP137
VCEO(sus)
80
100
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
TIP131
(VCE = 50 Vdc, IB = 0)
TIP132, TIP137
ICEO
0.5
0.5
mAdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
TIP131
(VCB = 100 Vdc, IE = 0)
TIP132, TIP137
ICBO
0.2
0.2
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
5.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
hFE
500
1000
15000
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 16 mAdc)
(IC = 6.0 Adc, IB = 30 mAdc)
VCE(sat)
2.0
3.0
Vdc
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.5
Vdc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2%.



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