S12NH3LL datasheet(4/12 Pages) STMICROELECTRONICS

Teilenummer	S12NH3LL

Bauteilbeschribung	N-channel 30V - 0.008ohm - 12A - SO-8 Ultra low gate charge STripFET TM Power MOSFET

PDF	12 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical characteristics

STS12NH3LL

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 6A

VGS= 4.5V, ID= 6A

0.008

0.010

0.0105

0.013

Ω

Table 4.

Dynamic

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

gfs

Forward transconductance

VDS =10V, ID = 12A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

965

285

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15V, ID = 12A

VGS =4.5V

(see Figure 7)

3.7

Gate Input Resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20mV

open drain

0.5

1.5

2.5

Ω

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