S4DNFS30 datasheet(3/12 Pages) STMICROELECTRONICS

Teilenummer	S4DNFS30

Bauteilbeschribung	N-channel - 30V - 0.044ohm - 4.5A SO-8 STripFET tm Power MOSFET plus schottky rectifier

PDF	12 Pages

Scroll/Zoom	100%

Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

3 / 12 page

STS4DNFS30

Electrical ratings

3/12

Electrical ratings

Table 1.

Mosfet absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

Gate- source voltage

± 20

Drain current (continuous) at TC = 25°C

4.5

Drain current (continuous) at TC = 100°C

3.2

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25°C

Table 2.

Schottky absolute maximum ratings

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

IF(RMS) RMS forward current

IF(AV)

Average forward current

TL=125°C

δ=0.5

IFSM

Surge non repetitive forward current

tp=10ms

Sinusoidal

IRRM

Repetitive peak reverse current

tp=2µs

F=1kHz

IRSM

Non repetitive peak reverse current

tp=100µs

dv/dt

Critical rate of rise of reverse voltage

10000

v/µs

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-amb Thermal resistance junction-amb Mosfet (1)

Mounted on FR-4 board (steady state)

62.5

°C/W

Tstg

Storage temperature range Max

-55 to 150

°C

Junction temperature

-55 to 150

°C

S4DNFS30 Datenblatt(PDF) 3 Page - STMicroelectronics

S4DNFS30 Datenblatt(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datenblatt Download

Link URL