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SL15T1 Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer SL15T1
Bauteilbeschribung  300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections
PDF  5 Pages
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SL15T1 Datenblatt(HTML) 3 Page - ON Semiconductor

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SL05T1 Series
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3
ELECTRICAL CHARACTERISTICS
Device
Device
Marking
VRWM
IR @ VRWM
Breakdown Voltage
(Note 4)
VC, Clamping Voltage
(Note 5)
Max
IPP
Capacitance
VBR @ 1 mA (Volts)
@ 1 A
@ 5 A
@ VR = 0 V, 1 MHz (pF)
(V)
(
mA)
Min
Max
(V)
(V)
(A)
Typ
Max
SL05
L05
5.0
20
6.0
8.0
9.8
11
17
3.5
5.0
SL15
L15
15
1.0
16.7
18.5
24
30
10
3.5
5.0
SL24
L24
24
1.0
26.7
29
43
55
5.0
3.5
5.0
4. VBR measured at pulse test current of 1 mA at an ambient temperature of 25°C
5. Surge current waveform per Figure 2
TYPICAL CHARACTERISTICS
0.1
10
10
Figure 1. Maximum Peak Power Rating
1
PULSE WIDTH (
ms)
100
1000
1
0.1
0.01
Figure 2. 8
× 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
020
40
60
t, TIME (
ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
80
Figure 3. Typical Junction Capacitance
−55
25
150
10
1
0.1
0.01
Figure 4. Typical Leakage Over Temperature
TEMPERATURE (
°C)
@ 50% VRWM
4
3.5
3
2
1.5
0.5
0
2.5
1
@ ZERO BIAS
@ VRWM
SL05
SL15
SL24
SL05T1



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