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FQB8N90C Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer FQB8N90C
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FQB8N90C Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc N-Channel MOSFET Transistor
FQB8N90C
www.iscsemi.com
2023-10-07
1
FEATURES
·Drain Current -ID=6.3A@ TC=25℃
·Drain Source Voltage -VDSS=900V(Min)
·Static Drain-Source On-Resistance
-RDS(on) = 1.9Ω(Max)@VGS= 10V
DESCRIPTION
·
Motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
6.3
A
IDM
Drain Current-Single Pluse
25
A
PD
Total Dissipation @TC=25℃
171
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.73
℃
/W


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