| Datenblatt-Suchmaschine für elektronische Bauteile |
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ISF1026 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISF1026 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISF1026 eq FQPF13N65C N-Channel MOSFET www.iscsemi.com 1 FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.65Ω(Max)@VGS= 10V APPLICATIONS · Solar Inverters · Switch Mode Power Supplies · DC-DC Converters · Motor drives Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Opetation Voltage ± 30 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pluse 52 A PD Total Dissipation @TC=25℃ 45 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.78 ℃ /W |
Ähnliche Teilenummer - ISF1026 |
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Ähnliche Beschreibung - ISF1026 |
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