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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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10ETS08F Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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10ETS08F Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Input Rectifier Diode 10ETS08F www.iscsemi.com 1 FEATURES · Fast soft recovery · Low forward voltage,high efficiency APPLICATIONS · output rectification and freewheeling in inverters, choppers and converters · input rectifications where severe restrictions on conducted EMI should be met ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 800 V IF(AV) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase) 170 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃ /W |
Ähnliche Teilenummer - 10ETS08F |
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Ähnliche Beschreibung - 10ETS08F |
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