| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC1675 Datenblatt(PDF) 2 Page - SEMTECH ELECTRONICS LTD. |
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2SC1675 Datenblatt(HTML) 2 Page - SEMTECH ELECTRONICS LTD. |
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2 / 3 page ![]() Dated : 19/12/2003 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® ST 2SC1675 Characteristics at Ta=25 OC Symbol Min. Typ. Max. Unit DC Current Gain at VCE=6V, IC=1mA R O Y hFE hFE hFE 40 70 120 - - - 80 140 240 - - - Collector-Emitter Saturation Voltage at IC=10mA, IB=1mA VCE(sat) - 0.08 0.3 V Base–Emitter On Voltage at VCE=6V, IC=1mA VBE(on) - 0.67 0.75 V Collector-Base Breakdown Voltage at IC=10µA, IE=0 BVCBO 50 - - V Collector-Emitter Breakdown Voltage at IC=5mA, IB=0 BVCEO 30 - - V Emitter-Base Breakdown Voltage at IE=10µA, IC=0 BVEBO 5 - - V Collector Cut-off Current at VCB=50V, IE=0 ICBO - - 0.1 µA Emitter Cut-off Current at VEB=5V, IC=0 IEBO - - 0.1 µA Current Gain Bandwidth Product at VCE=6V,IC=1mA fT 150 300 - MHz Output Capacitance at VCB=6V, IE=0, f=1MHz Cob - 2.0 2.5 pF G S P FORM A IS AVAILABLE |
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