WST8205 datasheet(4/8 Pages) VBSEMI

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.01

0.02

0.03

0.04

0.05

123

456

ID = 5.5 A

VGS - Gate-to-Source Voltage (V)

0.001

160

200

0.1

Time (s)

120

0.01

Threshold Voltage

Safe Operating Area, Junction-to-Case

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

0.1

100

0.01

1 ms

0.1

Limited by R DS(on)*

TC = 25 °C

Single Pulse

10 ms

100 ms

10 s

1 s

VDS - Drain-to-Source Voltage (V)

*VGS > minimum VGS at which RDS(on) is specified

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.1

0.01

10-4

10-3

10-2

10-1

100

600

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 115 °C/W

3. T JM - TA = PDMZthJA(t)

Notes:

4. Surface Mounted

PDM

Square Wave Pulse Duration (s)

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