| Datenblatt-Suchmaschine für elektronische Bauteile |
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MMBZ12VAL Datenblatt(PDF) 1 Page - Guangdong Youtai Semiconductor Co., Ltd. |
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MMBZ12VAL Datenblatt(HTML) 1 Page - Guangdong Youtai Semiconductor Co., Ltd. |
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1 / 5 page ![]() Common Anode Zeners for ESD Protection DESCRIPTION FEATURES The dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices ideal for situations where board space is at a premium. SOT-23 package allows either two separate unidirectional configurations or a single bidirectional configuration. Working peak reverse voltage 3V to 22V Standard Zener breakdown voltage 5.6V to 27V Peak power 24 or Watts @ 1.0ms (unidirectional) per Figure 6 Waveform ESD Rating: Class 3B (>16kV) per the Human Body Model Class C (>400V) per Machine Model ESD Rating of IEC61000-4-2 level 4, ±30kV contact Discharge Low leakage < 5.0 μA MACHANICAL DATA SOT-23 package Flammability Rating: UL 94V-0 Packaging: Tape and Reel High temperature soldering guaranted:260℃/10s APPLICATIONS Computers Printers Business Machines Communication systems Medical equipment MMBZxxxALT1G ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ABSOLUTE MAXIMUM RATING Symbol Parameter Value Units PPK Peak Power Dissipation @1.0ms MMBZ5V6AL thru MMBZ6V8AL MMBZ12VAL thru MMBZ27VAL 24 40 W PD Total Power Dissipation 200 mW TOPT Operating Temperature -55/+150 °C TSTG Storage Temperature -55/+150 °C www.umw-ic.com 1 友台半导体有限公司 UMW R |
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