MMBTA28 datasheet(1/3 Pages) DIODES

Teilenummer	MMBTA28

Bauteilbeschribung	NPN SURFACE MOUNT DARLINGTON TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Hersteller	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 3 page

Pb

Lead-free

DS30367 Rev. 8 - 2

1 of 3

MMBTA28

www.diodes.com

MMBTA28

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

•

Epitaxial Planar Die Construction

•

Ideal for Low Power Amplification and Switching

•

High Current Gain

•

Lead Free/RoHS Compliant (Note 3)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

12

V

Collector Current - Continuous

IC

500

mA

Power Dissipation (Note 1)

Pd

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

417

°C/W

Operating and Storage and Temperature Range

Tj, TSTG

-55 to +150

°C

Maximum Ratings

@ TA = 25

°C unless otherwise specified

A

E

J

L

TOP VIEW

M

B

C

H

G

D

K

C

B

E

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminal Connections: See Diagram

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

•

Marking (See Page 3): K6R

•

Ordering & Date Code Information: See Page 3

•

Weight: 0.008 grams (approximate)

Electrical Characteristics @ TA = 25°C unless otherwise specified

Notes:

1.

Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout

document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2.

Short duration pulse test used to minimize self-heating effect.

3.

No purposefully added lead.

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0

°

8

°

All Dimensions in mm

C

B

E

Features

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

V(BR)CBO

80



V

IC = 100

µA IE = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

12



V

IE = 100

µA IC = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

80



V

IC = 100

µA IB = 0

Collector Cutoff Current

ICBO



100

nA

VCB = 60V, IE = 0

ICES



500

nA

VCE = 10V

Emitter Cutoff Current

IEBO



100

nA

VEB = 10V, IC = 0

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

10,000



IC = 10mA, VCE = 5.0V

IC = 100mA, VCE = 5.0V

Collector-Emitter Saturation Voltage

VCE(SAT)



1.5

V

IC = 100mA, IB = 100

µA

Base-Emitter Saturation Voltage

VBE(SAT)



2.0

V

IC = 100mA, VCE = 5.0V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

8.0 Typical

pF

VCB = 10V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo

15 Typical

pF

VEB = 0.5V, f = 1.0MHz, IC = 0

Current Gain-Bandwidth Product

fT

125



MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

SPICE MODEL: MMBTA28

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