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AM29LV128ML93REF Datenblatt(PDF) 50 Page - Advanced Micro Devices

Teilenummer AM29LV128ML93REF
Bauteilbeschribung  128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
PDF  66 Pages
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Hersteller  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV128ML93REF Datenblatt(HTML) 50 Page - Advanced Micro Devices

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Am29LV128MH/L
25270C7 January 31, 2007
D A TA
SH EE T
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” on page 60 for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation
5. Byte/Word programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. AC Specifications listed are tested with V
IO = VCC. Contact AMD for information on AC operation with VIO ≠ VCC.
7. When using the program suspend/resume feature, if the suspend command is issued within tPOLL, tPOLL must be fully
re-applied upon resuming the programming operation. If the suspend command is issued after t
POLL, tPOLL is not required
again prior to reading the status bits upon resuming.
Parameter
Speed Options
JEDEC
Std.
Description
93R
103, 103R
113, 113R 123, 123R Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Effective Write Buffer Program Operation
(Notes 2, 4)
Per Byte
Typ
7.5
µs
Per Word
Typ
15
Accelerated Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
6.25
µs
Per Word
Typ
12.5
µs
Single Byte/Word
Program Operation (Note 2, 5)
Byte
Typ
60
µs
Word
Typ
60
Accelerated Single Byte/Word Programming
Operation (Note 2, 5)
Byte
Typ
54
µs
Word
Typ
54
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC Setup Time (Note 1)
Min
50
µs
t
BUSY
Erase/Program Valid to RY/BY# Delay
Max
90
ns
t
POLL
Program Valid Before Status Polling (Note 7)
Max
4
µs



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