AM29LV128MH103REF datasheet(65/66 Pages) AMD

65 / 66 page

January 31, 2007 25270C7

Am29LV128MH/L

D A TA

SH EET

Common Flash Memory Interface (CFI)

Changed wording in last sentence of third paragraph

from, “...the autoselect mode.” to “...reading array

data.” Changed CFI website address

Revision B+3 (December 2, 2002)

Global

Added sector group protection throughout datasheet

and added Table 4.

Product Selector Guide

Added V

IOs to table and removed Note #2

Ordering Information

Corrected typos in V

IO ranges. Removed Notes #1 and

Figure 6. Program Suspend/Program Resume

Change wait time to 15

μs.

Operating Ranges

Corrected typos in V

IO ranges. Removed full voltage

range.

DC Characteristics

Changed V

IH1 and VIH2 minimum to 1.9. Removed

typos in notes.

Read-Only Characteristics

Added a 30 ns option to t

PACC and tOE standard in ta-

ble. Added note #3.

Hardware Reset, Erase and Program Operations,

Temporary Sector Unprotect, and Alternate CE#

Controlled Erase and Program Operations

Added Note.

Revision B+4 (February 14, 2003)

Distinctive Characteristics

Corrected performance characteristics.

Product Selector Guide

Removed 93R speed option. Added Note 2.

Ordering Information

Corrected Valid Combination to reflect speed option

changes. Added Note.

AC Characteristics

Removed 93, 93R speed option. Added Note.

Input values in the t

WHWH1 and tWHWH2 parameters in

the Erase and Program Options table that were previ-

ously TBD. Also added notes 5 and 6.

Input values in the t

WHWH1 and tWHWH2 parameters in

the Alternate CE# Controlled Erase and Program Op-

tions table that were previously TBD. Also added Note

Erase and Programming Performance

Input values into table that were previously TBD.

Added note 4.

Revision C (May 16, 2003)

Global

Converted to full data sheet version. Modified Secured

Silicon Sector Flash Memory Region section to in-

clude ESN references. Changed data sheet title to

Am29LV128MH/L.

Erase and Programming Performance

Input values into table that were previously TBD. Modi-

fied notes.

Revision C+1 (June 11, 2003)

Product Selector Guide

Added Note 2 to 113 and 123 speed grades

Ordering Information

Modified speed grade options available, changed

speed grades mentioned in Note.

AC Characteristics, Erase and Program Operations

and Alternate CE# Controlled Erase and Program

Operations

Changed t

WHWH1 Accelerated Effective Write Buffer

Program Operations value

Revision C+2 (September 9, 2003)

Global

Added 90 ns speed options and Ordering Part Num-

bers

Ordering Information

Added Note regarding Ordering Part Numbers.

Program Suspend/Program Resume Command

Sequence

Modified last paragraph.

Command Definitions, Table 10

Modified First Addr for Program/Erase Suspend and

Resume.

AC Characteristics

Added T

RB, TBUSY specs.

AM29LV128MH103REF Datenblatt(PDF) 65 Page - Advanced Micro Devices

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