MMBTA92 datasheet(3/8 Pages) PHILIPS

3 / 8 page

2000 Apr 11

Philips Semiconductors

Product speciﬁcation

PNP high-voltage transistor

MMBTA92

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −200 V

−−250

IEBO

emitter cut-off current

IC = 0; VEB = −3V

−−100

hFE

DC current gain

VCE = −10 V; note 1

IC = −1mA

−

IC = −10 mA

−

IC = −30 mA

−

VCEsat

collector-emitter saturation voltage

IC = −20 mA; IB = −2mA

−−500

VBEsat

base-emitter saturation voltage

IC = −20 mA; IB = −2mA

−−900

collector capacitance

IE =ie = 0; VCB = −20 V;

f = 1 MHz

−

6pF

transition frequency

IC = −10 mA; VCE = −20 V;

f = 100 MHz

−

MHz

MMBTA92 Datenblatt(PDF) 3 Page - NXP Semiconductors

MMBTA92 Datenblatt(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datenblatt Download

Link URL