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P5000EB Datenblatt(PDF) 2 Page - UN Semiconducctor INC

Teilenummer P5000EB
Bauteilbeschribung  Thyristor Surge Suppressors (TSS)
PDF  6 Pages
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Hersteller  UNSEMI [UN Semiconducctor INC]
Direct Link  http://www.unsemi.com.tw
Logo UNSEMI - UN Semiconducctor INC

P5000EB Datenblatt(HTML) 2 Page - UN Semiconducctor INC

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Revision March 1,2022
www.unsemi.com.tw
For technical questions, contact: tech@unsemi.com.tw
ROHS
Thyristor Surge Suppressors (TSS)
@10/700μS,4KV
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
P0080EB - P5000EB Series - TO-92
Electrical Characteristics
2/5
P0080EB
P0300EB
P0640EB
P0720EB
P0900EB
P1100EB
P1300EB
P1500EB
P1800EB
P2000EB
P2300EB
P2600EB
P3100EB
P3500EB
P3800EB
P4200EB
P4500EB
P5000EB
6
25
58
65
75
90
120
140
170
180
190
220
275
320
360
400
420
440
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
25
40
77
88
98
130
160
180
220
220
260
300
350
400
460
520
540
600
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
50
50
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Part Number
P0080EB
P0300EB
P0640EB
P0720EB
P0900EB
P1100EB
P1300EB
P1500EB
P1800EB
P2000EB
P2300EB
P2600EB
P3100EB
P3500EB
P3800EB
P4200EB
P4500EB
P5000EB
Marking
pF Typ.
VDRM
@
IDRM=5μA
IDRM
VS
@100V/μS
IS
IT
CO
@1MHz
IH
V Min.
V Max.
V Max.
A Max.
μA Max.
mA Max.
mA Min.
Surge Ratings
Series
2/10μS¹
2/10μS²
A min
8/20μS¹
1.2/50μS²
A min
10/160μS¹
10/160μS²
A min
250
250
250
10/560μS¹
10/560μS²
A min
200
10/1000μS¹
10/1000μS²
A min
80
5/320μS¹
ITSM
50/60HZ
10/700μS²
di/dt
A min
A min
Amps/µs
max
100
30
500
B
Notes:
1. Current waveform in µs
2. Voltage waveform in µs
Notes:
- Absolute maximum ratings measured at TA= 25ºC (unless otherwise noted).
- Devices are bi-directional.
- Peak pulse current rating (IPP) is repetitive and guaranteed for the life of the product.
- IPP ratings applicable over temperature range of -40ºC to +85ºC
- The device must initially be in thermal equilibrium with -40°C < TJ < +150°C



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