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ISCF8022 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer ISCF8022
Bauteilbeschribung  SiC N-Channel MOSFET
PDF  3 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8022 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCF8022 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8022 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8022 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISCF8022
eq G3R450MT17D
SiC N-Channel MOSFET
www.iscsemi.com
1
FEATURES
·
Low Capacitances and Low Gate Charge
·
High V for Increased System Stability
·
Fast and Reliable Body Diode
·
High Avalanche and Short Circuit Ruggedness
APPLICATIONS
·
Witch Mode Power Supply(SMPS)
·
Power Factor Correction(PFC)
·
Uninterruptible Power Supply (UPS)
·
Motor drives
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1700
V
VGSS
Gate-Source Opetation Voltage
-10/+20
V
ID
Drain Current-Continuous
9
A
Drain Current-Continuous@Tc=100℃
6
A
Drain Current-Continuous@Tc=135℃
5
A
IDM
Drain Current-Single Pluse
16
A
PD
Total Dissipation @TC=25℃
88
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.7
℃
/W


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