ISCF8022 datasheet(1/4 Pages) ISC

Teilenummer	ISCF8022

Bauteilbeschribung	SiC N-Channel MOSFET

PDF	4 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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ISCF8022

eq IMZA120R030M1H

SiC N-Channel MOSFET

www.iscsemi.com

1

FEATURES

·

VDSS = 1200 V at TJ= 25°C

·

High Blocking Voltage with Low On-Resistance

·

RDS(ON)= 30mΩ（TYP.）@VGS=18V ;TJ= 25℃

·

Very low switching losses

·

Easy to Parallel and Simple to Drive

APPLICATIONS

·

General purpose drives (GPD)

·

EV-Charging

·

Online UPS/Industrial UPS

·

String inverters

·

Solar power optimizer

Absolute Maximum Ratings(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

1200

V

VGS

Gate-Source voltage

-4/+18

V

VGSmax

Gate-Source voltage（Absolute maximum values）

-8/+22

V

ID

Drain Current-Continuous

70

A

Drain Current-Continuous@Tc=100℃

49

A

IDM

Drain Current-Single Pluse

147

A

PD

Total Dissipation @TC=25℃

273

W

TJ

Max. Operating Junction Temperature

175

℃

Tstg

Storage Temperature

-40~175

℃

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ISCF8022 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

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