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TYN840 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TYN840 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc Thyristors TYN840 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM Repetitive peak reverse current VDRM = VRRM, Tj=25℃ -- -- 5 uA VDRM = VRRM, Tj=125℃ -- -- 4 mA IDRM Repetitive peak off-state current VDRM = VRRM, Tj=25℃ -- -- 5 uA VDRM = VRRM, Tj=125℃ -- -- 4 mA VTM On-state voltage ITM= 23A -- -- 1.75 V IGT Gate-trigger current VD=12V; RL=33Ω 3.5 -- 35 mA VGT Gate-trigger voltage -- -- 1.3 V VGD VD = VDRM RL = 3.3 kΩ,TJ=125℃ 0.2 -- -- V IH Holding current IT=0.5A -- -- 75 mA dv/dt Critical rate of rise of off-state voltage VD=0.67VDRM Tj=125℃ 1000 -- -- V/us Rth(j-c) Thermal resistance junction to mounting base in free air -- 0.8 -- ℃ /W Package outline(Dimensions in mm) |
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