Rating and Characteristic Curves (ACPDT-24CAN-HF)

Comchip Technology CO., LTD.

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Page 2

V

V

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Electrical Characteristics (at TA=25°C unless otherwise noted)

IT = 1mA

VBR

VRWM

Reverse stand-off voltage

Reverse breakdown voltage

25.4

24

V

nA

VRWM = 24V

IPP = 1A

VC

IR

Reverse leakage current

Clamping voltage

40

50

pF

IPP = 3A

VR = 0V, f = 1MHz

Cd

VC

11

70

IR = 1mA

rdif

Junction capacitance

300

0

8

16

20

4

0

5

10

15

20

25

Fig.3 - Cd vs VR Cure

VR, (V)

SMD ESD Protection Diode

Differential resistance

27.8

30.3

Fig.1 - 8/20µs Peak Pulse Current

Waveform Acc. IEC 61000-4-5

0%

Time, (µs)

0

10

20

30

40%

80%

120%

40

100%IPP: 8µs

50%IPP: 20µs

-t

e

Fig.2 - ESD Pulse Waveform According

to IEC 61000-4-2

tr = 0.7ns to1ns

t

10%

90%

30ns

100%

60ns

0

20

40

50

60

10

30

1

2

3

4

Fig.4 - VC vs IPP Cure

IPP, (A)

12

Ω

AQW-JP010

REV:A