ACPDZC2V5AHT-HF

Page 1

AQW-G7046

REV:A

Comchip Technology CO., LTD.

RoHS Device

Halogen Free

Company reserves the right to improve product design , functions and reliability without notice.

Circuit Diagram

SMD ESD Protection Diode

Features

- Ultra small SMD package:0201.

- IEC 61000-4-2 Level 4 ESD protection.

- Bi-directional ESD protection.

- Low leakage current.

- Low clamping voltage.

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

VBR

V

IT = 1mA

3.3

Reverse leakage current

IR

µA

VRWM = 2.5V

1.0

V

VRWM

2.5

Clamping voltage

V

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

35

IPP = 5A, TP = 8/20µs

5.0

7.0

VC

VC

IPP = 17A, TP = 8/20µs

Reverse stand-off voltage

Reverse breakdown voltage

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

119

Junction temperature range

Tj

°C

Storage temperature range

TSTG

°C

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

-55 to +125

Peak pulse current

IPP

A

TP = 8/20µs

17

TP = 8/20µs

±30

ESD

-55 to +150

0.026(0.67)

0.022(0.57)

0201/DFN0603

Dimensions in inches and (millimeter)

0.015(0.37)

0.011(0.27)

0.013(0.340)

0.011(0.275)

0.002(0.06)

REF.

0.017(0.435)

0.014(0.365)

0.002(0.04)

REF.

0.011(0.275)

0.008(0.205)

0.007(0.175)

0.004(0.105)

0.007(0.175)

0.004(0.105)

Mechanical data

- Case: 0201/DFN0603 package,

molded plastic.

- Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

- Mounting position: Any.

- Weight: 0.0004 grams (approx.).

- AEC-Q101 Qualified.