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IXFN360N15T2 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer IXFN360N15T2
Bauteilbeschribung  N-Channel MOSFET
PDF  3 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXFN360N15T2 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISFM1088
eq IXFN360N15T2
N-Channel MOSFET
www.iscsemi.com
1
DESCRIPTION
·
Drain Current -ID= 310A@ TC=25℃
·
Drain Source Voltage
-VDSS= 150V(Min)
·
Static Drain-Source On-Resistance
-RDS(on) = 4.0mΩ(Max)@VGS= 10V
APPLICATIONS
·
Switching application
·
DC-DC converters
·
Battery chargers
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
150
V
VGSS
Gate-Source Voltage
±
20
V
ID
Drain Current-continuous@ TC=25℃
310
A
IDM
Pulse Drain Current
900
A
PD
Total Dissipation@TC=25℃
1070
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.14
℃
/W


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