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20ETS08FP Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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20ETS08FP Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Input Rectifier Diode 20ETS08FP www.iscsemi.com 1 FEATURES · Low forward voltage drop · High frequency operation APPLICATIONS · International Rectifier Switches · Output Rectifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 800 V IF(AV) Average Rectified Forward Current 20 A IFSM Non-repetitive Peak Surge Current 300 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃ /W 1 3 |
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Ähnliche Beschreibung - 20ETS08FP |
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