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PCF8583 Datenblatt(PDF) 18 Page - NXP Semiconductors |
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PCF8583 Datenblatt(HTML) 18 Page - NXP Semiconductors |
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18 / 28 page ![]() 1997 Jul 15 18 Philips Semiconductors Product specification Clock/calendar with 240 × 8-bit RAM PCF8583 10 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). 11 HANDLING Inputs and outputs are protected against electrostatic charge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices. Advice can be found in Data Handbook IC12 under “Handling MOS Devices”. 12 DC CHARACTERISTICS VDD = 2.5 to 6.0 V; VSS =0V; Tamb = −40 to +85 °C unless otherwise specified. SYMBOL PARAMETER MIN. MAX. UNIT VDD supply voltage (pin 8) −0.8 +7.0 V IDD supply current (pin 8) − 50 mA ISS supply current (pin 4) − 50 mA VI input voltage −0.8 VDD + 0.8 V II DC input current − 10 mA IO DC output current − 10 mA Ptot total power dissipation per package − 300 mW PO power dissipation per output − 50 mW Tamb operating ambient temperature −40 +85 °C Tstg storage temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS MIN. TYP.(1) MAX. UNIT VDD supply voltage (operating mode) I2C-bus active 2.5 − 6.0 V I2C-bus inactive 1.0 − 6.0 V VDDosc supply voltage (quartz oscillator) Tamb = 0 to 70 °C; note 2 1.0 − 6.0 V IDD supply current (operating mode) fSCL = 100 kHz; clock mode; note 3 −− 200 µA IDDO supply current (clock mode) see Fig.20 fSCL = 0 Hz; VDD = 5 V − 10 50 µA fSCL = 0 Hz; VDD = 1 V − 210 µA IDDR data retention fOSCI = 0 Hz; VDD = 1 V Tamb = −40 to + 85 °C −− 5 µA Tamb = −25 to + 70 °C −− 2 µA VEN I2C-bus enable level note 4 1.5 1.9 2.3 V SDA VIL LOW level input voltage note 5 −0.8 − 0.3VDD V VIH HIGH level input voltage note 5 0.7VDD − VDD +0.8 V IOL LOW level output current VOL = 0.4 V 3 −− mA ILI input leakage current VI =VDD or VSS −1 − +1 µA Ci input capacitance note 6 −− 7pF |
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