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IXFN100N30 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer IXFN100N30
Bauteilbeschribung  N-Channel MOSFET
PDF  3 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXFN100N30 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

  IXFN100N30 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXFN100N30 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXFN100N30 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISFM1138
eq IXFN100N30
N-Channel MOSFET
www.iscsemi.com
1
DESCRIPTION
·
Drain Current -ID= 100A@ TC=25℃
·
Drain Source Voltage
-VDSS= 300V(Min)
·
Static Drain-Source On-Resistance
-RDS(on) = 23mΩ(Max)@VGS= 10V
APPLICATIONS
·
DC-DC converters
·
Battery chargers
·
DC choppers
·
Low voltage relays
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
300
V
VGSS
Gate-Source Voltage Continuous
±
20
V
ID
Drain Current-continuous@ TC=25℃
100
A
IDM
Pulse Drain Current
400
A
PD
Total Dissipation@TC=25℃
520
W
TJ
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
D
G
S
S
SOT-227 package


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