N Channel Electrical Characteristics (TAmbient=25ºC unless noted otherwise)

Symbol

Parameters

Conditions

Min.

Typ.

Max. Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0 V, ID=250μA

20

Volt

IDSS

Zero Gate Voltage Drain Current

VDS=20V, VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=±12V, VDS=0V

±100

nA

On Characteristics(Note 3)

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

0.5

0.75

1.2

Volt

RDS(ON)

Drain-Source On-State Resistance

VGS=4.5V, ID=3A

29

65

mΩ

VGS=2.5V, ID=2.8A

35

90

mΩ

gFS

Forward Transconductance

VDS=5V, ID=3A

8

S

Dynamic Characteristics(Note 4)

Ciss

Input Capacitance

VDD=10V, VGS=0V ,

F=1MHz

396

pF

Coss

Output Capacitance

54

pF

Crss

Reverse Transfer Capacitance

40

pF

Switching Characteristics(Note 4)

td(on)

Turn-on Delay Time

VDD=10V, VGS=4.5V,

RGEN=3.3Ω

14

nS

tr

Turn-on Rise Time

10

nS

td(off)

Turn-Off Delay Time

30

nS

tf

Turn-Off Fall Time

7

nS

Qg

Total Gate Charge

VDS=10V, ID=3A,

VGS=4.5V

4.1

nC

Qgs

Gate-Source Charge

1.1

nC

Qgd

Gate-Drain Charge

0.7

nC

Drain-Source Diode Characteristics

VSD

Diode Forward Voltage

(Note 3)

VGS=0V, IS=1A

1.2

V

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Surface mounted on FR4 Board, t≤10 sec

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

4. Guaranteed by design, not subject to production

 

 

 

 

N/P Channel Enhancement MOSFET

B C2003DW