Silicon PNP Power Transistor

BUW23

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=-1mA,IC=0

-5

--

--

V

V (BR)CEO

Collector-Emitter Breakdown Voltage

IC=-10mA, IB=0

-400

--

--

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC=-1mA ,IE=0

-400

--

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -5A; IB= -1.5A

--

--

-1.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -5A; IB= -1.5A

--

--

-1.6

V

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

--

--

-1

mA

hFE

DC Current Gain

IC= -1A; VCE= -5V

20

--

--

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notification. The information contained herein is presented only as a guide for the applications of our

products.

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