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PD55015STR-E Datenblatt(PDF) 10 Page - STMicroelectronics

Teilenummer PD55015STR-E
Bauteilbeschribung  RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
PDF  27 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD55015STR-E Datenblatt(HTML) 10 Page - STMicroelectronics

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Typical performance
PD55015-E, PD55015S-E
10/27
PD55015S
Figure 20.
Output power vs.
drain voltage
Figure 21.
Drain efficiency vs. drain voltage
7
8
9
10
11
121314151617
VDS, DRAIN-SOURCE VOLTAGE (V)
0
5
10
15
20
25
520 MHz
480 MHz
500 MHz
Idq = 150mA
Pin = .5 W
7
8
9
10
11
12
13
14151617
VDS, DRAIN-SOURCE VOLTAGE (V)
30
40
50
60
70
500 MHz
520 MHz
480 MHz
Idq = 150mA
Pin = .5 W
Figure 22.
Output power vs.
gate bias voltage
Figure 23.
Power gain vs. output power
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE BIAS VOLTAGE (V)
0
5
10
15
20
500 MHz
520 MHz
480 MHz
VDD = 12.5 V
Pin = .5 W
0
5
10
15
20
Pout (W)
10
11
12
13
14
15
16
Gp (dB)
915 MHz
900 MHz
876 MHz
Vdd = 12.5V
Idq = 150mA



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