PJS6413 datasheet(1/6 Pages) PANJIT

Teilenummer	PJS6413

Bauteilbeschribung	20V P-Channel Enhancement Mode MOSFET

PDF	6 Pages

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Hersteller	PANJIT [Pan Jit International Inc.]

Direct Link	http://www.panjit.com.tw

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PJS6413

January 20,2022

PJS6413-REV.05

Page 1

20V P-Channel Enhancement Mode MOSFET

Voltage

-20 V

Current

-4.4A

SOT-23 6L

Unit : inch(mm)

Features

 RDS(ON) , VGS@-4.5V, ID@-4.4A<82m

Ω

 RDS(ON) , VGS@-2.5V, ID@-2.8A<110m

Ω

 RDS(ON) , VGS@-1.8V, ID@-1.5A<146m

Ω

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: SOT-23 6L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.014 grams

 Marking: S13

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

+12

V

Continuous Drain Current

ID

-4.4

A

Pulsed Drain Current

IDM

-17.6

A

Power Dissipation

Ta=25oC

PD

2

W

Derate above 25oC

16

mW/ oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal Resistance

-

Junction to Ambient(Note 3)

RθJA

62.5

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)

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